tsm2314 sot - 23 features advance trench process technology high density cell design for ultra low on - resistance application load switch pa switch ordering information part no. package packing tsm2314cx rf sot - 23 3kpcs / 7 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 20 v gate - source voltage v gs 12 v continuous drain current, v gs @4.5v. i d 4.9 a pulsed drain current, v gs @4.5v i dm 15 a continuous sour ce current (diode conduction) a,b i s 1.0 a ta = 25 o c 1.25 maximum power dissipation ta = 75 o c p d 0.8 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter s ymbol limit unit junction to case thermal resistance r ? jf 75 o c/w junction to ambient thermal resistance (pcb mounted) r ? ja 12 0 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. product summary v ds (v) r ds(on) (m ) i d (a) 33 @ v gs = 4.5v 4.9 40 @ v gs = 2.5v 4.4 20 100 @ v gs = 1.8v 2.9 block diagram n - channel mosfet pin definition : 1. gate 2. source 3. drain product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250 a bv dss 20 -- -- v gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 0.45 -- 1 v gate body leakage v gs = 4.5v, v ds = 0v i gss -- -- 1.5 a zero g ate voltage drain current v ds = 16v, v gs = 0v i dss -- -- 1.0 a on - state drain current v ds 10v, v gs = 4.5v i d(on) 15 -- -- a v gs = 4.5v, i d = 4.9a -- 27 33 v gs = 2.5v, i d = 4.4a -- 33 40 drain - source on - state resistance v gs = 1.8v, i d = 2 .9a r ds(on) -- 80 100 m forward transconductance v ds = 1 5v, i d = 5.0a g fs -- 40 -- s diode for ward voltage i s = 1.0a, v gs = 0v v sd -- 0.8 1.2 v dynamic b total gate charge q g -- 11 14 gate - source charge q gs -- 1.5 -- gate - drain charge v ds = 10v, i d = 5.0a, v gs = 4.5v q gd -- 2.1 -- nc input capacitance c is s -- 900 -- output capacitance c oss -- 140 -- reverse transfer capacitance v ds = 10v, v gs = 0v, f = 1.0mhz c rss -- 100 -- pf switching c turn - on delay time t d(on) -- 0.53 0.8 turn - on rise time t r -- 1.4 2.2 turn - off delay time t d(off) -- 13.5 20 turn - off fall time v dd = 10v, r l = 10 , i d = 1a, v gen = 4.5v, r g = 6 t f -- 5.9 9 ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subject to production testing. b. switching time is essentially independent of operating temperature. tsm2314 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
